Email the author Photo-Emf Peculiarities of Ge Nanocluster Structures Formed on Oxidized Si Surface
Abstract
Ge nanocluster systems on SiOх are paid much interest of scientists today as far as introduction of an insulting SiOх layer can modify essentially the electrical properties of well examined Ge on Si structures making such systems prospective in the view of their possible application to new nanoelectronic devices such as memory cells, solar elements, and infrared photodetectors. A possibility of epitaxial formation of Si and Ge nanoclusters on initially amorphous silicon oxide layer is considered. The effect of such a layer on the density and uniformity distribution of the self-assembled Ge nanoclusters formed in molecular-beam epitaxy chamber "Katun" on SiOх (х ≤ 2) and their optoelectronic properties, in particular lateral photoconductivity and photo-emf, has been investigated.
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References
Hiroya I., Norihiro K., Kenji O. Local electrical characteristics of ultra-thin SiO2 films formed on Si(0 0 1) surfaces // Surf. Sci. – 2001. – V. 493. – P. 653–658.
Ichikawa M. Growth of Si and Ge nanostructures on Si substrates using ultrathin SiO2 technology // IEEE J. Quantum Electron. – 2002. – V. 38, N 8. – P. 988–994.
Kozyrev Yu.N., Kartel M.T., Rubezhanska M.Yu. et al. Investigation of Si and Ge nanocluster systems on the surface SiOx/Si prepared by molecular beam epitaxy // Reports of NAS of Ukrainian. – 2010. – N 1. – P. 71–76 (in Ukraine).
Kozyrev Y.N., Kondratenko S.V., Rubezhanska M.Y. et al. Quantum size effects in multilayer Si-Ge epitaxial heterostructures // Nanomaterials and Supramolecular Structures. Physics, Chemistry and Applications / Eds. A.P. Shpak, P.P. Gorbyk. – Berlin: Springer, 2010. – P. 235–245.
Lysenko V.S., Gomeniuk Yu.V., Kozyrev Yu.N. et al. Effect of Ge nanoislands on lateral photoconductivity of Ge-SiOx-Si structures // Adv. Mater. Res. – 2011. – V. 276. – P. 179–186.
Kondratenko S.V., Vakulenko O.V., Kozyrev Yu.N. et al. Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands // J. Mater. Sci. – 2011.– V. 46. – P. 5737–5742.
Yakimov A.I., Dvurechenskii A.V., Nikiforov A.I., Proskuryakov Y.Y. Interlevel Ge/Si quantum dot infrared photodetector // J. Appl. Phys. – 2001. – V. 89. – P. 5676–5682.
Fundamentals of amorphous semiconductors. Report of the National Academy of Sciences. – Washington: National Academy of Sciences, 1972. – 107 p.
Kozyrev Yu.N., Rubezhanska M.Yu., Kondratenko S.V. et al. Morphology of three-dimensional Ge nanoclusters growing on SiOх (х<2) film and efficiency of photoelectromotive force in this structure // Thin Films & Reactive Sputter Deposition: Proc. 14th Int. Conf. (17–20 Nov. 2008, Gent, Belgium). – P.76–79.
Copyright (©) 2011 Yu. M. Kozyrev, M. Yu. Rubezhanska, N. P. Storozhuk, S. V. Kondratenko
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