Chemistry, Physics and Technology of Surface, 2014, 5 (4), 461-466.

Theoretical Study on Laser Annealing of Non-Stoichiometric SiOx films



DOI: https://doi.org/10.15407/hftp05.04.461

O. O. Gavrylyuk

Abstract


The mathematical modeling of temperature distribution in SiOx film was carried out. The use of laser annealing in SiOx films is shown to be advisable and multi-pulse annealing being more effective than single-pulse one. The maximum temperature after the laser pulse in the center of the laser beam does not depend on the distance between the laser beams at simultaneous annealing with several laser beams.

Keywords


silicon oxide; nanocrystal; laser annealing; thermoconductivity equation

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References


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DOI: https://doi.org/10.15407/hftp05.04.461

Copyright (©) 2014 O. O. Gavrylyuk

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