Email the author Theoretical evaluation of the temperature field distribution in the silicon periodic nanostructures during thermal annealing
DOI: https://doi.org/10.15407/hftp08.01.003
Abstract
Interesting direction of investigations is using surface-periodic structures in solar cells, because micrometer and nanometer periodic structures enlarge area of solar cells surface. At this, for using in solar cells, creation is proposed of p-n or n-p junctions in micro-threads of those structures. Taking into consideration that creation of those junctions is to be realized under a temperature impact, necessity arouses of analyzing temperature distribution in periodic structures through heating. It makes it possible to control the alloying process more widely and to create p-n or n-p junctions in micro-threads. In the process of thermal annealing of porous silicon, desorption of electrochemical processing products takes place on its surface and its luminescent properties change.
In this work numerical calculations are made of a temperature distribution in periodic structures on silicon surface in process of thermal annealing.
Calculations realized in the given investigation make it possible to forecast a temperature distribution in silicon periodic structures in process of thermal annealing. It gives a possibility for more precise alloying such structures. It is shown that after 40 µs the specimen gets warmed thoroughly. But a small irregular warming takes place between micro-threads that can be caused by heated air fluctuations. Distribution of the temperature profiles is shown at different time intervals.It is shown that in case of thermal annealing a span between micro-threads heats up.
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DOI: https://doi.org/10.15407/hftp08.01.003
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