Effect of pore depth on the effective minority carrier lifetime in macroporous silicon | Onyshchenko | Chemistry, Physics and Technology of Surface

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V. F. Onyshchenko
V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
Ukraine

L. A. Karachevtseva
V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
Ukraine

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Copyright (©) 2019 V. F. Onyshchenko, L. A. Karachevtseva

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