Chemistry, Physics and Technology of Surface, 2011, 2 (3), 249-252.

Effect of Oxygen and Water Adsorption on Thermoelectric Work Function for GeS Single Crystals



N. D. Savchenko, T. N. Shchurova, I. I. Opachko, T. I. Panait, K. O. Popovic

Abstract


The results of theoretical and experimental studies of oxygen and water adsorption effect on thermoelectric work function for GeS single crystals are presented. Surface bending of the energy bands under oxygen and water molecules adsorption has been determined in terms of the theoretical approach developed by W.A. Harrison based on LCAO and pseudopotential methods. Calculated values of surface bending of the energy bands under oxygen and water adsorption for GeS single crystals are in quantitative agreement with experimental values for thermoelectric work function changes obtained from the measurements of contact potential difference.

Full Text:

PDF

References


Vaughn D.D., Patel R.J., Hickner M.A., Schaak R.E. Single-crystal colloidal nanosheets of GeS and GeSe // J. Am. Chem. Soc. – 2010. – V. 132, N 43. – P. 15170–15172.

Solanki G.K., Patel D.B., Unadkat S.R., Agarwal M.K. Synthesis and characterization of germanium monosulphide (GeS) single crystals grown using different transporting agents // Pramana (Journal of physics). – 2010. – V. 74, N 5. – P. 813–825.

An’chkov D.G., Davydov S.Yu. Effect of adsorption on the surface mobility of carriers in the semiconductor substrate // Phys. Solid State. – 2011. – V. 53, N 4. – P. 820–823.

Harrison W.A. Elementary Electronic Structure, –London: World Scientific Publishing Co., 2004. – 838 p.

Shchurova T.N., Savchenko N.D., Kondrat A.B., Opachko I.I. Auger analysis and simulation of electronic states for Ge33As12Se55 ‑ p-Si heterojunction // Surf. Interface Anal. – 2006. – V. 38. – P. 448–451.

Shchurova T., Savchenko N., Kondrat A. et al. Simulation of the surface bending of energy band for binary chalcogenide semiconductors // Photoelectronics. – 2008. – V. 17. – P. 104–107.

Savchenko N.D., Shchurova T.N., Popovych K.O. et al. Simulation of electronic states in the band gap of ZnS: Cu, Cl crystallophosphors // Semiconductor Physics, Quantum Electronics & Optoelectronics. – 2004 – V. 7, N 2. – P. 133–137.

Mann J. B. Atomic structure calculations. I. Hartree-Fock Energy Results for Elements from Hydrogen to Lawrencium. – Springfield: Clearinghouse, 1967. – P. 22151–22160.

Harrison W.A. Coulomb interactions in semiconductors and insulators // Phys. Rev. B. – 1985. – V. 31. – P. 2121–2132.

Harrison W.A. Total energies in the tight-binding theory // Phys. Rev. B. – 1981. – V. 23. – P. 5230–5245.

Paxton A.T., Kohanoff J.J. A tight binding model for water // J. Chem. Phys. – 2011. – V. 134. – P. (044130) 1–11.

Morrill J.S., Ginter M.L., Hwang E.S. et al. Two-photon REMPI spectra from a1Dg and b1Sg+ to d1Pg in O2 // J. Mol. Spectrosc. – 2003. – V. 219, N 2. – P. 200–216.

Bletskan D.I., Madyar I.I., Mikulaninets S.V., Sichka M.Yu. Electrical and photoelectric properties of GeS layered crystals grown by different techniques // Inorg. Mater. – 2000. – V. 36, N 6. – P. 544–550.

Bletskan D.I., Budiansky V.I., Gorodetsky I.Ya. et al. Investigation of local centres in layered GeS compound // Physics and Technology of Semiconductors. – 1975. – V. 9, N 8. – P. 1512–1516. (in Russian).




Copyright (©) 2011 N. D. Savchenko, T. N. Shchurova, I. I. Opachko, T. I. Panait, K. O. Popovic

Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.