The Chemical-Dynamic Polishing of CdTe Surface by (NH<sub>4</sub>)<sub>2</sub>Cr<sub>2</sub>O<sub>7</sub>–HCl–Oxalic Acid Etching Compositions

Authors

  • P. S. Chukhnenko Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
  • Yu. B. Khalavka Yuriy Fedkovych Chernivtsi National University
  • V. G. Ivanits'ka Yuriy Fedkovych Chernivtsi National University
  • Z. F. Tomashik Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
  • V. M. Tomashik Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
  • I. B. Stratiychuk Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

Abstract

The nature of chemical dissolution of undoped and doped by the IV-A elements (Ge, Sn, Pb) of cadmium telluride in the (NH4)2Cr2O7–HCl–oxalic etching composition has been investigated. The projections of the equal etching rates of these semiconductors have been constructed, and the concentration regions of the polishing solutions have been determined. It has been shown that the dissolution of these materials is limited by the diffusion stages. Surface state after the etching has been investigated by the metallography and SEM. The composition of the near surface layers has been determined using energy dispersive X-ray spectroscopy.

References

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Chukhnenko, P. S.; Khalavka, Y. B.; Ivanits’ka, V. G.; Tomashik, Z. F.; Tomashik, V. M.; Stratiychuk, I. B. The Chemical-Dynamic Polishing of CdTe Surface by (NH<sub>4< sub>)<sub>2< sub>Cr<sub>2< sub>O<sub>7< Sub>–HCl–Oxalic Acid Etching Compositions. Him. Fiz. Tehnol. Poverhni 2012, 3, 178-183.

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Vol. 3 No. 2 (2012): Chemistry, Physics and Technology of Surface / Himia, Fizika ta Tehnologia Poverhni

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