Influence of local electric fields on the photoluminescence of CdS nanocrystals on the oxidized macroporous silicon surface

L. Karachevtseva; S. Kuchmii; O. Lytvynenko; K. Parshyn; O. Sapelnikova; O. Stroyuk; Wang Bo

doi:10.15407/hftp06.04.489

Authors

L. Karachevtseva Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
S. Kuchmii Pisarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine
O. Lytvynenko Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
K. Parshyn Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
O. Sapelnikova Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
O. Stroyuk Pisarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine
Wang Bo Ningbo University of Technology

DOI:

https://doi.org/10.15407/hftp06.04.489

Keywords:

local electric fields, CdS nanocrystals, photoluminescence, oxidized macroporous silicon

Abstract

Oxidized macroporous silicon structures with CdS surface nanocrystals have been proposed to enhance the photoluminescence of CdS nanoparticles due to reducing the electron recombination outside the nanoparticle layer. It has been found that the resonance electron scattering on the Si–SiO₂ interface for samples with low concentration of Si–O–Si states transforms into scattering on ionized surface states for samples with high concentration of Si–O–Si in the structured oxide. The maximum intensity of photoluminescence was measured for a structure with the maximal strength of the local electric field at the interface of silicon matrix with the structured oxide. It indicates a significant decrease of non-radiative recombination of electrons generated in CdS nanocrystal layer due to the counter flow of electrons from the silicon matrix towards the nanocrystals layer. The quantum yield of photoluminescence increases with time due to evaporation of water molecules.

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