Formation of GaAs Micropopous Layers on р-GaAs Substrates by Chemical Etching Method and Their Photoluminescence

Authors

  • G. A. Paschenko Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine
  • M. Yu. Kravetsky Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine
  • A. V. Fomin Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine

Abstract

The porous GaAs layers have been obtained on the GaAs(100) and GaAs(111) substrates by the chemical etching method. Etching of the substrates was carried out in HF-based solutions using HNO3 or Н2О2 as an oxidizer. Sponge layers were formed with adding of HNO3 and pores got pyramid-like shapes uniformly covering the surface and orienting along one direction when H2O2 was used. The photoluminescence spectra of the layers contain the wide band with a non-elementary structure in the visible spectral range. The visible photoluminescence band is decomposed into three sub-bands with Emax equal to 2.844, 2.508 and 1.85 eV and that is caused not from emission of compound element oxides but is mainly due to a quantum dimensional effect. According to the calculations, the linear sizes of crystallites are estimated as 6.5, 4 and 3.5 nm with predominating of 4 nm diameter.

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How to Cite

(1)
Paschenko, G. A.; Kravetsky, M. Y.; Fomin, A. V. Formation of GaAs Micropopous Layers on р-GaAs Substrates by Chemical Etching Method and Their Photoluminescence. Him. Fiz. Tehnol. Poverhni 2012, 3, 90-93.

Issue

Vol. 3 No. 1 (2012): Chemistry, Physics and Technology of Surface / Himia, Fizika ta Tehnologia Poverhni

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Articles

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