Теоретичне дослідження індукованого тиском фазового переходу в діоксиді ванадію
DOI: https://doi.org/10.15407/hftp06.02.211
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1. Strelcov Е., Lilach Y., Kolmakov A. Gas Sensor based on metal−insulator transition in VO2 nanowire thermistor, Nano Lett. , 9(2009) 2322.
2. Balakrishnan V., Ko Ch. , Ramanathana Sh. In-situ studies on twinning and cracking proximal to insulator-metal transition in self-supported VO2/Si3N4 membrane , J. Mater. Res., 27 (2012) 1476.
3. Andreev V.N., Klimov V.A. Effect of deformation on the metal-semiconductor phase transition in vanadium dioxide thin films,Physics of the Solid State , 53 (2011) 577.
4. Kim H., Chae B., Youn D. et al. Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices, New J. Phys. , 6 (2004) 52.
5. Ibisate M., Golmayo D., López C. Vanadium dioxide thermochromic opals grown by chemical vapour deposition, J. Opt. A: Pure Appl. Opt. , 10 (2008) 125202.
6. Nag J., Haglund R.F., Jr. Synthesis of vanadium dioxide thin films and nanoparticles, J. Phys.: Condens. Matter, 20 (2008) 264016.
7. Cavalleri A., Tóth Cs., Siders C.W. et al. Femtosecond structural dynamics in VO2 during an ultrafast solid–solid phase transition, Phys. Rev. Lett., 87 (2001) 237401.
8. Boriskov P.P., Velichko A.A., Pergament A.L. et al. The effect of electric field on metal-insulator phase transition in vanadium dioxide , Technical Physics Letters, 28 (2002) 406.
9. Schmidt M.W., Baldridge K.K., Boatz J.A. et al. General atomic and molecular electronic structure system, J. Comput. Chem., 14 (1993 ) 1347.
10. Kim H.-T., Chae B.-G., Youn D.-H. et al. Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices, New J. Phys., 6 (2004) 52.
DOI: https://doi.org/10.15407/hftp06.02.211
Copyright (©) 2015 A. G. Grebenyuk, V. N. Kaurkovskaya, V. V. Lobanov
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