Написати автору Газовий датчик на основі нанорозмірних напівпровідникових гетероструктур ZnS/CdS, що працює при кімнатній температурі
DOI: https://doi.org/10.15407/hftp08.04.432
Анотація
Синтезовано нанорозмірні дисперсні гетероструктури ZnS/CdS для створення газових датчиків, які ефективно працюють при кімнатній температурі. Методом РФА показано виникнення кубічної фази ZnS на гексагональному CdS. Показано зменшення ширини забороненої зони зразків з 2.40 еВ для CdS до 2.35 еВ для 1.0 ZnS/CdS. Висока селективність, відтворюваність і невеликий, до 100 с, час зміни опору дозволяють використовувати синтезовані зразки як економічні газові датчики на амоніак і ацетон.
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DOI: https://doi.org/10.15407/hftp08.04.432
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